Secondary ion mass spectrometry (SIMS)

Secondary-ion mass spectrometry (SIMS) is a technique used to analyze the composition and trace elemental contaminant levels of solid surfaces and thin films by sputtering the surface of the specimen with a focused primary ion beam and collecting and analysing the ejected secondary ions. The mass/charge ratios of these secondary ions are measured with a mass spectrometer to determine the elemental, isotopic, or molecular composition of the surface.

With over 70 years of experience cumulatively in the analytical services industry, we have worked with our customers to bring the highest quality analysis to research teams across the globe.

Benefits of Secondary Ion Mass Spectrometry:

• Excellent detection sensitivity (ppm-ppb) for dopants, impurities
• Can detect all elements and isotopes, including H
• Depth profiling dopants and impurities in III-V heterostructures
• Surface, layer, substrate and interface
• Stoichiometry in some cases